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Strong mid-infrared optical absorption by supersaturated sulfur doping in silicon

Umezu, Ikurou; Kohno, A; Warrender, Jeffrey M.; Takatori, Y; Hirao, Y; Nakagawa, S; Sugimura, A; Charnvanichborikarn, Supakit; Williams, James; Aziz, Michael


Single crystalline silicon supersaturated with sulfur was prepared by ion implantation followed by pulsed laser melting and rapid solidification. A strong and broad optical absorption band and free-carrier absorption appeared for this sample around 0.5 eV and below 0.2 eV, respectively. A possible candidate for the origin of the 0.5 eV band is the formation of an impurity band by supersaturated doping.

CollectionsANU Research Publications
Date published: 2011
Type: Conference paper
Source: AIP Conference Proceedings
DOI: 10.1063/1.3666252


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