Skip navigation
Skip navigation

Solid Phase Epitaxial Regrowth of Amorphous Layers in Silicon Created by Low Energy Phosphorous Implantation: A Medium Energy Ion Scattering Study

Ruffell, Simon; Mitchell, I V; Simpson, Peter J

Description

Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm-2 up to 1e16 cm-2, the associated a-Si thicknesses from 9.2 nm to 20 nm. Regrowth was driven by rapid thermal annealing for anneal temperatures 425 °C ≤ TA ≤ 600 °C and for times up to 2500 s. The Si(P) regrowth velocities exceed...[Show more]

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
URI: http://hdl.handle.net/1885/33902
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2005.08.079

Download

File Description SizeFormat Image
01_Ruffell_Solid_Phase_Epitaxial_Regrowth_2006.pdf209.72 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator