Solid Phase Epitaxial Regrowth of Amorphous Layers in Silicon Created by Low Energy Phosphorous Implantation: A Medium Energy Ion Scattering Study
Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm-2 up to 1e16 cm-2, the associated a-Si thicknesses from 9.2 nm to 20 nm. Regrowth was driven by rapid thermal annealing for anneal temperatures 425 °C ≤ TA ≤ 600 °C and for times up to 2500 s. The Si(P) regrowth velocities exceed...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Ruffell_Solid_Phase_Epitaxial_Regrowth_2006.pdf||209.72 kB||Adobe PDF||Request a copy|
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