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Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing

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Davis, Jeff A; Dao, Lap Van; Wen, X; Ticknor, C; Hannaford, Peter; Coleman, Victoria A; Jagadish, Chennupati; Koike, Kazuto; Sasa, Shigehiko; Inoue, Masataka; Yano, Mitsuaki; Tan, Hark Hoe

Description

Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations.

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
URI: http://hdl.handle.net/1885/33603
Source: Nanotechnology
DOI: 10.1088/0957-4484/19/05/055205

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