Fabrication of Schottky Barrier MOSFETs using Self-Assembly CoSi2 Nanopatterning and Spacer Gate Technologies
A self-assembly patterning method for generation of epitaxial CoSi 2 nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n+-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO2 and 300 nm Si...[Show more]
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