Tailoring of Epitaxial CoSi2/Si Nanostructures by Low Temperature Wet Oxidation
We have investigated a process for tailoring of epitaxial CoSi 2/Si nanostructures using low temperature wet oxidation. A separation between two CoSi2 layers on a Si substrate in the range of 60 nm is generated by a self-assembly process. During subsequent low temperature wet oxidation, SiO2 formation on top of the silicide layers pushes the latter into the substrate. At the edges of the gap, the silicide layers are shifted in both and directions, leading to an effective reduction of the...[Show more]
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