Capacitance spectroscopy study of InGaAs/GaAs quantum dot structures
Self assembled InGaAs/GaAs quantum dots (QD) have a great potential for high performance optoelectronic devices such as low threshold laser diodes, infrared detectors, modulators, memories. In order to characterize the behavior of the QD system, we use two p+-n structures grown epitaxially on GaAs under similar conditions. The first structure acts as reference while in the second structure a single QD self-assembled layer is introduced in the middle of the n-GaAs matrix layer. The structure is...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Optoelectronics and Advanced Materials|
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