Fabrication of Schottky Barrier MOSFETs on SOI by a Self-Assembly CoSi2-Patterning Method
A new self-assembly patterning method for generation of epitaxial CoSi2 nanostructures was used to fabricate 70 nm gate-length Schottky barrier MOSFETs on SOI substrates. This technique involves only conventional optical lithography and standard silicon processing steps. It is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal processing. The strain field is generated along the edges of a mask consisting of 20 nm SiO2 and 300 nm Si3N4. During rapid thermal...[Show more]
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