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Fabrication of Schottky Barrier MOSFETs on SOI by a Self-Assembly CoSi2-Patterning Method

Zhao, Qing Tai; Kluth, Patrick; Winnerl, Stephan; Mantl, Siegfried


A new self-assembly patterning method for generation of epitaxial CoSi2 nanostructures was used to fabricate 70 nm gate-length Schottky barrier MOSFETs on SOI substrates. This technique involves only conventional optical lithography and standard silicon processing steps. It is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal processing. The strain field is generated along the edges of a mask consisting of 20 nm SiO2 and 300 nm Si3N4. During rapid thermal...[Show more]

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
Source: Solid-State Electronics
DOI: 10.1016/S0038-1101(03)00046-7


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