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Luminescence Study of Si and Ge Implanted (1-102) Sapphires

Kim, S; Park, C J; Cho, H Y; Choi, Suk Ho; Elliman, Robert


Implantation with 30 keV Si - or Ge - and subsequent annealing at 1100°C create nanocrystalline Si or Ge (nc-Si or nc-Ge) in host materials such as (1̄102) sapphire and fused silica. Photoluminescence (PL) and cathodluminescence (CL) have been used to i

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
Source: Journal of the Korean Physical Society


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