Skip navigation
Skip navigation

Epitaxial CoSi2-Nanostructures: An approach to silicon nanoelectronics

Kluth, Patrick; Zhao, Qing Tai; Winnerl, Stephan; Mantl, Siegfried


CoSi2-nanostructures were fabricated using a self-assembly process involving local oxidation of silicides (LOCOSI). The nanostructures are generated along the edge of a mask consisting of SiO2 and Si3N4, deposited by plasma enhanced chemical vapor deposition (PECVD) and patterned with conventional optical lithography. The mask induces a stress field near its edges into the underlying CoSi2/Si-heterostructure. Rapid thermal oxidation (RTO) leads to the separation of the CoSi2 layer in this...[Show more]

CollectionsANU Research Publications
Date published: 2002
Type: Journal article
Source: Microelectronic Engineering
DOI: 10.1016/S0167-9317(02)00781-5


File Description SizeFormat Image
01_Kluth_Epitaxial_2002.pdf1.4 MBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator