Epitaxial CoSi2-Nanostructures: An approach to silicon nanoelectronics
Kluth, Patrick; Zhao, Qing Tai; Winnerl, Stephan; Mantl, Siegfried
Description
CoSi2-nanostructures were fabricated using a self-assembly process involving local oxidation of silicides (LOCOSI). The nanostructures are generated along the edge of a mask consisting of SiO2 and Si3N4, deposited by plasma enhanced chemical vapor deposition (PECVD) and patterned with conventional optical lithography. The mask induces a stress field near its edges into the underlying CoSi2/Si-heterostructure. Rapid thermal oxidation (RTO) leads to the separation of the CoSi2 layer in this...[Show more]
Collections | ANU Research Publications |
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Date published: | 2002 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/32947 |
Source: | Microelectronic Engineering |
DOI: | 10.1016/S0167-9317(02)00781-5 |
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File | Description | Size | Format | Image |
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01_Kluth_Epitaxial_2002.pdf | 1.4 MB | Adobe PDF | Request a copy |
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