Epitaxial CoSi2-Nanostructures: An approach to silicon nanoelectronics
CoSi2-nanostructures were fabricated using a self-assembly process involving local oxidation of silicides (LOCOSI). The nanostructures are generated along the edge of a mask consisting of SiO2 and Si3N4, deposited by plasma enhanced chemical vapor deposition (PECVD) and patterned with conventional optical lithography. The mask induces a stress field near its edges into the underlying CoSi2/Si-heterostructure. Rapid thermal oxidation (RTO) leads to the separation of the CoSi2 layer in this...[Show more]
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