Skip navigation
Skip navigation

Effect of low-temperature InP cap layer thickness on InAs quantum dot photoluminescence

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
Source: Journal of Crystal Growth
DOI: 10.1016/j.jcrysgro.2010.08.048


File Description SizeFormat Image
01_Wang_Effect_of_low-temperature_InP_2011.pdf231.63 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator