Structural characterization of Ge nanocrystals in silica amorphised by ion irradiation
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 MeV Si ions over a different fluence range (2 × 1011-2 × 1013 cm-2) than previously reported. Size and depth distributions as well as structural disorder
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|Source:||Nuclear Instruments and Methods in Physics Research: Section A|
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