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Structural characterization of Ge nanocrystals in silica amorphised by ion irradiation

Araujo, Leandro; Giulian, Raquel; Johannessen, Bernt; Llewellyn, David; Kluth, Patrick; Azevedo, G de M; Cookson, D J; Ridgway, Mark C

Description

Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 MeV Si ions over a different fluence range (2 × 1011-2 × 1013 cm-2) than previously reported. Size and depth distributions as well as structural disorder

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
URI: http://hdl.handle.net/1885/32631
Source: Nuclear Instruments and Methods in Physics Research: Section A
DOI: 10.1016/j.nimb.2008.03.175

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