Light-enhanced surface passivation of TiO2-coated silicon
Titanium dioxide is shown to afford good passivation to non-diffused silicon surfaces and boron-diffused surfaces after a low-temperature anneal. The passivation most likely owes to the significant levels of negative charge instilled in the films, and passivation is enhanced by illumination-advantageous for solar cells-indicating that a titanium dioxide photoreaction is at least partly responsible for the low surface recombination. We demonstrate a surface recombination velocity of less than 30...[Show more]
|Collections||ANU Research Publications|
|Source:||Progress in Photovoltaics: Research and Applications|
|01_Thomson_Light-enhanced_surface_2012.pdf||311.28 kB||Adobe PDF||Request a copy|
|02_Thomson_Light-enhanced_surface_2012.pdf||268.08 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.