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Achieving Straight Growth of InAs-on-GaAs Nanowire Heterostructures

Messing, Maria E; Wong-Leung, Yin-Yin (Jennifer); Zanolli, Zeila; Joyce, Hannah J; Gao, Qiang; Wallenberg, L Reine; Johansson, Jonas; Jagadish, Chennupati; Tan, Hark Hoe

Description

One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in thin films. For III-V semiconductor nanowires, axial heterostructures with an interchange of the group III element typically grow straight in only one interface direction. In the case of InAs-GaAs heterostructures, straight nanowire growth has been demonstrated for growth of GaAs on top of InAs, but...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/31128
Source: Nano Letters
DOI: 10.1021/nl202051w

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