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The effect of the annealing ramp rate on the formation of voids in silicon

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Ruffell, Simon; Simpson, Peter J; Knights, Andrew P

Description

We show the strong dependence on annealing ramp rate of residual open-volume defects in silicon following helium ion implantation and annealing. Helium was implanted at 60keV energy, 1 × 1016cm-2 fluence into silicon and subsequently annealed to 800 °C

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
URI: http://hdl.handle.net/1885/30964
Source: Journal of Physics: Condensed Matter
DOI: 10.1088/0953-8984/19/46/466202

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