The effect of the annealing ramp rate on the formation of voids in silicon
We show the strong dependence on annealing ramp rate of residual open-volume defects in silicon following helium ion implantation and annealing. Helium was implanted at 60keV energy, 1 × 1016cm-2 fluence into silicon and subsequently annealed to 800 °C
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|Source:||Journal of Physics: Condensed Matter|
|01_Ruffell_The_effect_of_the_annealing_2007.pdf||305.5 kB||Adobe PDF||Request a copy|
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