III-V compound semiconductor nanowires for optoelectronic device applications
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs...[Show more]
|Collections||ANU Research Publications|
|Source:||International Journal of High Speed Electronics and Systems|
|01_Gao_III-V_compound_semiconductor_2011.pdf||268.24 kB||Adobe PDF||Request a copy|
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