Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process
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Kim, Jung Hyuk; Moon, So Ra; Kim, Yong; Chen, Zhi Gang; Zou, Jin; Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati; Tan, Hark Hoe; Choi, Duk-Yong
Description
We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges...[Show more]
dc.contributor.author | Kim, Jung Hyuk | |
---|---|---|
dc.contributor.author | Moon, So Ra | |
dc.contributor.author | Kim, Yong | |
dc.contributor.author | Chen, Zhi Gang | |
dc.contributor.author | Zou, Jin | |
dc.contributor.author | Joyce, Hannah J | |
dc.contributor.author | Gao, Qiang | |
dc.contributor.author | Jagadish, Chennupati | |
dc.contributor.author | Tan, Hark Hoe | |
dc.contributor.author | Choi, Duk-Yong | |
dc.date.accessioned | 2015-12-08T22:14:15Z | |
dc.identifier.issn | 0957-4484 | |
dc.identifier.uri | http://hdl.handle.net/1885/30146 | |
dc.description.abstract | We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated. | |
dc.publisher | Institute of Physics Publishing | |
dc.source | Nanotechnology | |
dc.subject | Keywords: Epitaxially grown; Germanium nanowires; Nano-bridges; Reactant gas; Side walls; Silicon substrates; Two-temperature; Chemical vapor deposition; Epitaxial growth; Germanium; Nanowires | |
dc.title | Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 23 | |
dc.date.issued | 2012 | |
local.identifier.absfor | 100706 - Nanofabrication, Growth and Self Assembly | |
local.identifier.absfor | 091204 - Elemental Semiconductors | |
local.identifier.ariespublication | u4695161xPUB71 | |
local.type.status | Published Version | |
local.contributor.affiliation | Kim, Jung Hyuk , Dong-A University | |
local.contributor.affiliation | Moon, So Ra, Dong-A University | |
local.contributor.affiliation | Kim, Yong, Dong-A University | |
local.contributor.affiliation | Chen, Zhi Gang, University of Queensland | |
local.contributor.affiliation | Zou, Jin, University of Queensland | |
local.contributor.affiliation | Choi, Duk-Yong, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Joyce, Hannah J, University of Oxford | |
local.contributor.affiliation | Gao, Qiang, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Tan, Hoe Hark, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Jagadish, Chennupati, College of Physical and Mathematical Sciences, ANU | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.issue | 11 | |
local.bibliographicCitation.startpage | 115603 | |
local.identifier.doi | 10.1088/0957-4484/23/11/115603 | |
local.identifier.absseo | 970102 - Expanding Knowledge in the Physical Sciences | |
dc.date.updated | 2016-02-24T11:19:49Z | |
local.identifier.scopusID | 2-s2.0-84863260707 | |
local.identifier.thomsonID | 000301661700010 | |
Collections | ANU Research Publications |
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