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Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies

Mondal, Ramit Kumar; Adhikari, Sonachand; Chatterjee, Vijay; Pal, Suchandan

Description

The lighting industry undergoes a revolutionizing transformation with the introduction of III-nitride semiconductors, and “LEDs” became a household name. The solid-state light source GaN/InGaN replaced incandescent and compact fluorescent lamps. The UV region (∼200−400 nm) has yet to see this paradigm shift. The UV region comprised of AlN/AlGaN, possess unexpected problems such as high dislocation density leading to poor internal quantum efficiency, difficulty in achieving high concentration of...[Show more]

CollectionsANU Research Publications
Date published: 2021
Type: Journal article
URI: http://hdl.handle.net/1885/299461
Source: Materials Research Bulletin
DOI: 10.1016/j.materresbull.2021.111258

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