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Role of F on the Electrical Activation of As in Ge

Impellizzeri, G; Napolitani, E; Boninelli, S; Sullivan, James; Roberts, Jason; Buckman, Stephen; Ruffell, Simon; Priolo, Francesco; Privitera, V

Description

Fluorine is known to strongly influence the dopant diffusion and electrical activation in Si. Similar effects might be exploited in Ge for optimizing its application in microelectronics. The role of F on the electrical activation of As in Ge after thermal

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/29323
Source: ECS Journal of Solid State Science and Technology
DOI: 10.1149/2.009203jss

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