Skip navigation
Skip navigation

Role of F on the Electrical Activation of As in Ge

Request a Copy

link to publisher version

  • Altmetric Citations

Impellizzeri, G; Napolitani, E; Boninelli, S; Sullivan, James; Roberts, Jason; Buckman, Stephen; Ruffell, Simon; Priolo, Francesco; Privitera, V

Description

Fluorine is known to strongly influence the dopant diffusion and electrical activation in Si. Similar effects might be exploited in Ge for optimizing its application in microelectronics. The role of F on the electrical activation of As in Ge after thermal

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/29323
Source: ECS Journal of Solid State Science and Technology
DOI: 10.1149/2.009203jss

Download

File Description SizeFormat Image
01_Impellizzeri_Role_of_F_on_the_Electrical_2012.pdf259.24 kBAdobe PDF    Request a copy
Show full item record


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator