Role of F on the Electrical Activation of As in Ge
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Impellizzeri, G; Napolitani, E; Boninelli, S; Sullivan, James; Roberts, Jason; Buckman, Stephen; Ruffell, Simon; Priolo, Francesco; Privitera, V
Description
Fluorine is known to strongly influence the dopant diffusion and electrical activation in Si. Similar effects might be exploited in Ge for optimizing its application in microelectronics. The role of F on the electrical activation of As in Ge after thermal
Collections | ANU Research Publications |
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Date published: | 2012 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/29323 |
Source: | ECS Journal of Solid State Science and Technology |
DOI: | 10.1149/2.009203jss |
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01_Impellizzeri_Role_of_F_on_the_Electrical_2012.pdf | 259.24 kB | Adobe PDF | Request a copy |
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