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Role of F on the Electrical Activation of As in Ge

Impellizzeri, G; Napolitani, E; Boninelli, S; Sullivan, James; Roberts, Jason; Buckman, Stephen; Ruffell, Simon; Priolo, Francesco; Privitera, V


Fluorine is known to strongly influence the dopant diffusion and electrical activation in Si. Similar effects might be exploited in Ge for optimizing its application in microelectronics. The role of F on the electrical activation of As in Ge after thermal

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
Source: ECS Journal of Solid State Science and Technology
DOI: 10.1149/2.009203jss


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