The effect of a post oxidation in-situ nitrogen anneal on Si surface passivation
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Jin, Hao; Weber, Klaus; Blakers, Andrew
Description
The thermal stability of Si / SiO2 stacks and Si / SiO2 / Si3N4 stacks with and without post oxidation in-situ anneal in nitrogen is investigated by Quasi-steady state photoconductivity decay (QSSPCD) and Electronic Paramagnetic Resonance (EPR). With in-situ annealing in nitrogen, the Si-SiO2 interface shows a reduced density of paramagnetic defects and better thermal stability. Si / SiO2 / Si3N4 stacks have a much slower depassivation rate than Si / SiO2 stacks due to hydrogen stored in...[Show more]
dc.contributor.author | Jin, Hao | |
---|---|---|
dc.contributor.author | Weber, Klaus | |
dc.contributor.author | Blakers, Andrew | |
dc.coverage.spatial | Waikoloa Hawaii | |
dc.date.accessioned | 2015-12-08T22:09:43Z | |
dc.date.created | May 8-12 2006 | |
dc.identifier.isbn | 1424400163 | |
dc.identifier.uri | http://hdl.handle.net/1885/29156 | |
dc.description.abstract | The thermal stability of Si / SiO2 stacks and Si / SiO2 / Si3N4 stacks with and without post oxidation in-situ anneal in nitrogen is investigated by Quasi-steady state photoconductivity decay (QSSPCD) and Electronic Paramagnetic Resonance (EPR). With in-situ annealing in nitrogen, the Si-SiO2 interface shows a reduced density of paramagnetic defects and better thermal stability. Si / SiO2 / Si3N4 stacks have a much slower depassivation rate than Si / SiO2 stacks due to hydrogen stored in nitride layer. | |
dc.publisher | OmniPress | |
dc.relation.ispartofseries | World Conference on Photovoltaic Energy Conversion 2006 | |
dc.source | Proceedings of the World Conference on Photovoltaic Energy Conversion 2006 | |
dc.subject | Keywords: Enterprise resource planning; Photoconductivity; Rapid thermal annealing; Thermodynamic stability; Thermooxidation; In-situ annealing; Nitrogen annealing; Quasi-steady state photoconductivity decay (QSSPCD); Silicon solar cells | |
dc.title | The effect of a post oxidation in-situ nitrogen anneal on Si surface passivation | |
dc.type | Conference paper | |
local.description.notes | Imported from ARIES | |
local.description.refereed | Yes | |
dc.date.issued | 2006 | |
local.identifier.absfor | 090699 - Electrical and Electronic Engineering not elsewhere classified | |
local.identifier.absfor | 091299 - Materials Engineering not elsewhere classified | |
local.identifier.ariespublication | u4251866xPUB63 | |
local.type.status | Published Version | |
local.contributor.affiliation | Jin, Hao, College of Engineering and Computer Science, ANU | |
local.contributor.affiliation | Weber, Klaus, College of Engineering and Computer Science, ANU | |
local.contributor.affiliation | Blakers, Andrew, College of Engineering and Computer Science, ANU | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.startpage | 1 | |
local.bibliographicCitation.lastpage | 3 | |
local.identifier.doi | 10.1109/WCPEC.2006.279326 | |
local.identifier.absseo | 850504 - Solar-Photovoltaic Energy | |
dc.date.updated | 2015-12-08T07:26:52Z | |
local.identifier.scopusID | 2-s2.0-41749108398 | |
Collections | ANU Research Publications |
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