Depassivation of Si-SiO2 interface following rapid thermal annealing
The thermal stability of the Si-SiO2 interface of thermally oxidised silicon wafers is investigated using the Quasi-steady state photoconductivity decay (QSS-PCD) method. Planar silicon (100) and (111), as well as textured (100) wafers with various surface orientations were subjected to Rapid Thermal Annealing. Wafers textured with inverted pyramids displayed the most rapid depassivation rate, while (100) planar wafers showed the slowest depassivation rate. The depassivation rate of wafers...[Show more]
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|Source:||Proceedings of the World Conference on Photovoltaic Energy Conversion 2006|
|01_Jin_Depassivation_of_Si-SiO2_2006.pdf||344.81 kB||Adobe PDF||Request a copy|
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