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Solid-state microwave annealing of ion-implanted 4H-SiC

Sundaresan, Siddarth G; Tian, Yong-lai; Ridgway, Mark C; Mahadik, Nadeemullah A; Qadri, S B; Rao, Mulpuri V

Description

Solid-state microwave annealing was performed at temperatures up to 2120 °C for 30 s on ion-implanted 4H-SiC in N2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 °C is 2.65 nm for 10 μm × 10 μm atomic force micro

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
URI: http://hdl.handle.net/1885/28957
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2007.04.018

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