Solid-state microwave annealing of ion-implanted 4H-SiC
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Sundaresan, Siddarth G; Tian, Yong-lai; Ridgway, Mark C; Mahadik, Nadeemullah A; Qadri, S B; Rao, Mulpuri V
Description
Solid-state microwave annealing was performed at temperatures up to 2120 °C for 30 s on ion-implanted 4H-SiC in N2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 °C is 2.65 nm for 10 μm × 10 μm atomic force micro
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2007 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/28957 |
| Source: | Nuclear Instruments and Methods in Physics Research: Section B |
| DOI: | 10.1016/j.nimb.2007.04.018 |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Sundaresan_Solid-state_microwave_2007.pdf | 236.52 kB | Adobe PDF |  |
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