Skip navigation
Skip navigation

Solid-state microwave annealing of ion-implanted 4H-SiC

Sundaresan, Siddarth G; Tian, Yong-lai; Ridgway, Mark C; Mahadik, Nadeemullah A; Qadri, S B; Rao, Mulpuri V


Solid-state microwave annealing was performed at temperatures up to 2120 °C for 30 s on ion-implanted 4H-SiC in N2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 °C is 2.65 nm for 10 μm × 10 μm atomic force micro

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2007.04.018


File Description SizeFormat Image
01_Sundaresan_Solid-state_microwave_2007.pdf236.52 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator