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Passivation of LPCVD nitride silicon stacks by atomic H

Jin, Hao; Weber, Klaus; Blakers, Andrew


In this paper, H introduction into low pressure chemical vapor deposited silicon nitride (LPCVD SiN) films using molecular and atomic hydrogen is discussed and compared. Infra-red Multiple Internal Reflection (MIR) measurements were taken to analyse the hydrogen bond content in the nitride films. Quasi-steady state photoconductivity decay (QSSPCD) measurements on phosphorus diffused samples were used to determine the effective lifetime and the emitter saturation current Joe. Long process times...[Show more]

CollectionsANU Research Publications
Date published: 2006
Type: Conference paper
Source: Proceedings of the World Conference on Photovoltaic Energy Conversion 2006
DOI: 10.1109/WCPEC.2006.279287


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