Passivation of LPCVD nitride silicon stacks by atomic H
In this paper, H introduction into low pressure chemical vapor deposited silicon nitride (LPCVD SiN) films using molecular and atomic hydrogen is discussed and compared. Infra-red Multiple Internal Reflection (MIR) measurements were taken to analyse the hydrogen bond content in the nitride films. Quasi-steady state photoconductivity decay (QSSPCD) measurements on phosphorus diffused samples were used to determine the effective lifetime and the emitter saturation current Joe. Long process times...[Show more]
|Collections||ANU Research Publications|
|Source:||Proceedings of the World Conference on Photovoltaic Energy Conversion 2006|
|01_Jin_Passivation_of_LPCVD_nitride_2006.pdf||190.28 kB||Adobe PDF||Request a copy|
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