Medium-range order in amorphous silicon investigated by constrained structural relaxation of two-body and four-body electron diffraction data
The structures of four types of amorphous silicon are examined by an experimentally constrained structural relaxation method (ECSR). Experimental selected area electron diffraction data and fluctuation electron microscopy normalized diffraction variance data were used as constraints to guide a Monte Carlo relaxation procedure towards best fit models. A Tersoff potential was also used to further restrict the space of possible solutions. The materials examined were self-ion-implanted silicon and...[Show more]
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