REMOVAL OF HYDROGEN AND DEPOSITION OF SURFACE CHARGE DURING RAPID THERMAL ANNEALING
The submission of a hydrogenated oxide-passivated silicon wafer to a rapid thermal anneal (RTA) leads to a complicated change in effective lifetime τeff. Within seconds, τeff decreases rapidly before increasing to near its initial level, and then decrea
|Collections||ANU Research Publications|
|Source:||Proceedings of the 33rd IEEE Photovoltaic Specialist Conference|
|01_Kho_REMOVAL_OF_HYDROGEN_AND_2008.pdf||160.22 kB||Adobe PDF|
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