REMOVAL OF HYDROGEN AND DEPOSITION OF SURFACE CHARGE DURING RAPID THERMAL ANNEALING
The submission of a hydrogenated oxide-passivated silicon wafer to a rapid thermal anneal (RTA) leads to a complicated change in effective lifetime τeff. Within seconds, τeff decreases rapidly before increasing to near its initial level, and then decrea
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|Source:||Proceedings of the 33rd IEEE Photovoltaic Specialist Conference|
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