Skip navigation
Skip navigation

REMOVAL OF HYDROGEN AND DEPOSITION OF SURFACE CHARGE DURING RAPID THERMAL ANNEALING

Kho, Teng; McIntosh, Keith; Tan, Jason; Thomson, Andrew; Chen, Florence

Description

The submission of a hydrogenated oxide-passivated silicon wafer to a rapid thermal anneal (RTA) leads to a complicated change in effective lifetime τeff. Within seconds, τeff decreases rapidly before increasing to near its initial level, and then decrea

CollectionsANU Research Publications
Date published: 2008
Type: Conference paper
URI: http://hdl.handle.net/1885/28702
Source: Proceedings of the 33rd IEEE Photovoltaic Specialist Conference
DOI: 10.1109/PVSC.2008.4922678

Download

File Description SizeFormat Image
01_Kho_REMOVAL_OF_HYDROGEN_AND_2008.pdf160.22 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator