Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays
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yuan, xiaoming; Wang, Naiyin; Tian, Zhenzhen; Zhang, Fanlu; Li, Li; Lockrey, Mark N; He, Jun; Jagadish, Chennupati; Tan, Hark Hoe
Description
Selective area epitaxy is a powerful growth technique that has been used to produce III-V semiconductor nanowire and nanomembrane arrays for photonic and electronic applications. The incorporation of a heterostructure such as quantum wells (QWs) brings new functionality and further broadens their applications. Using InP nanowires and nanomembranes as templates, we investigate the growth of InAsP QWs on these pure wurtzite nanostructures. InAsP QWs grow both axially and laterally on the...[Show more]
Collections | ANU Research Publications |
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Date published: | 2020 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/285047 |
Source: | Nanoscale Horizons |
DOI: | 10.1039/d0nh00410c |
Access Rights: | Open Access |
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Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays.pdf | 1.03 MB | Adobe PDF |
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