Passivation of Crystalline Silicon Using Silicon Nitride
The extraordinary capacity of plasma-enhanced chemical-vapour-deposited (PECVD) silicon nitride (SiN) to passivate the surface of crystalline silicon wafers and, in the case of multicrystalline silicon, improve the bulk material by hydrogenation has attracted a great deal of research and development. This review summarizes the state of the art of surface passivation by PECVD SiN, together with the present understanding of the physical mechanisms that underlie it. The impact of SiN on ultimate...[Show more]
|Collections||ANU Research Publications|
|Source:||WCPEC-3: Proceedings of 3rd World Conference on Photovoltaic Energy Conversion|
|01_Cuevas_Passivation_of_Crystalline_2003.pdf||478.22 kB||Adobe PDF||Request a copy|
|02_Cuevas_Passivation_of_Crystalline_2003.pdf||1.78 MB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.