Cuevas, Andres; Kerr, Mark; Schmidt, Jan
The extraordinary capacity of plasma-enhanced chemical-vapour-deposited (PECVD) silicon nitride (SiN) to passivate the surface of crystalline silicon wafers and, in the case of multicrystalline silicon, improve the bulk material by hydrogenation has attracted a great deal of research and development. This review summarizes the state of the art of surface passivation by PECVD SiN, together with the present understanding of the physical mechanisms that underlie it. The impact of SiN on ultimate...[Show more]
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