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Si-SiO2 interface passivation by plasma NH3 and atomic H

Jin, Hao; Weber, Klaus; Jayaprasad, A; Smith, Paul; Blakers, Andrew


Plasma ammonia treatment at 400°C leads to de-passivation of a fully hydrogenated Si-SiO2 interface, and to passivation of a fully de-hydrogenated Si-SiO2 interface. Plasma NH3 exposure causes irreversible Si surface damage and degradation of thermal sta

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
Source: Rare Metals
DOI: 10.1016/S1001-0521(07)60062-X


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