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Growth Mechanism of Truncated Triangular GaAs Nanowires

Zou, Jin; Wang, Hui; Auchterlonie, Graeme J; Paladugu, Mohanchand; Gao, Y N; Kim, Yong; Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati; Tan, Hark Hoe


During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, we have determined the growth mechanism of truncated triangular GaAs nanowires.

CollectionsANU Research Publications
Date published: 2006
Type: Conference paper
Source: Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology
DOI: 10.1109/ICONN.2006.340690


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