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In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse

Li, Ziyuan; Yuan, Xiaoming; Gao, Qian; Yang, Inseok; Li, Li; Caroff, Philippe; Allen, Monica; Allen, Jeffery; Tan, Hark Hoe; Jagadish, Chennupati; Fu, Lan


Surface passivation of semiconductor nanowires (NWs) is important for their optoelectronic properties and applications. Here, the in situ passivation effect of an epitaxial InP shell and the corresponding photodetector performance is experimentally studied. Compared with the unpassivated GaAs1-xSbx core-only NWs, the GaAs1-xSbx/InP core/shell NWs have shown much stronger photoluminescence and cathodoluminescence intensities. Correspondingly, the fabricated single GaAs1-xSbx/InP core/shell NW...[Show more]

CollectionsANU Research Publications
Date published: 2020-03-30
Type: Journal article
Source: Nanotechnology
DOI: 10.1088/1361-6528/ab7c74


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