Introduction of atomic hydrogen into Si 3 N 4 /SiO 2 /Si stacks
Atomic H generated by a plasma NH3 source at 400°C was demonstrated to passivate dehydroge-nated Si3N4/SiO2/Si stacks effectively by bonding with defects in the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N2 after atomic H reintroduct
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