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Understanding the Kink Formation in GaAs/InAs Heterostructural Nanowires

Paladugu, Mohanchand; Zou, Jin; Wang, Hui; Auchterlonie, Graeme J; Kim, Yong; Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati; Tan, Hark Hoe

Description

The kinks formation in heterostructural nanowires was observed to be dominant when InAs nanowires were grown on GaAs nanowires. Nanowires were grown through vapor-liquid-solid (VLS) mechanism in an MOCVD (metalorganic chemical vapor deposition) reactor. GaAs nanowires were grown in [1 1 1 ]B direction on a GaAs (1 1 1 )B substrate. When InAs nanowires grown on the GaAs nanowires, most of the InAs nanowires changed their growth directions from [1 1 1 ]B to other 〈111〉B directions. The kinks...[Show more]

CollectionsANU Research Publications
Date published: 2006
Type: Conference paper
URI: http://hdl.handle.net/1885/27420
Source: Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology
DOI: 10.1109/ICONN.2006.340689

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