Paladugu, Mohanchand; Zou, Jin; Wang, Hui; Auchterlonie, Graeme J; Kim, Yong; Joyce, Hannah J; Gao, Qiang; Tan, Hoe Hark; Jagadish, Chennupati
The kinks formation in heterostructural nanowires was observed to be dominant when InAs nanowires were grown on GaAs nanowires. Nanowires were grown through vapor-liquid-solid (VLS) mechanism in an MOCVD (metalorganic chemical vapor deposition) reactor. GaAs nanowires were grown in [1 1 1 ]B direction on a GaAs (1 1 1 )B substrate. When InAs nanowires grown on the GaAs nanowires, most of the InAs nanowires changed their growth directions from [1 1 1 ]B to other 〈111〉B directions. The kinks...[Show more]
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