Skip navigation
Skip navigation

Variation of ion-irradiation induced strain as a function of ion fluence in Si

Raghuveerasamy, Lakshmanasamy; Hatt, Stephanie; Kluth, Patrick; Kluth, Susan; Dogra, Rakesh; Ridgway, Mark C


Strain in Si induced by ion irradiation at temperatures of 200-400 °C has been measured at room temperature. Quantitative analysis of the strain distribution produced by 750-keV Si ion implantation in Si substrates was characterized by double-crystal X-r

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2007.01.007


File Description SizeFormat Image
01_Raghuveerasamy_Variation_of_ion-irradiation_2007.pdf160 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator