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Hydrogen reintroduction by forming gas annealing to LPCVD silicon nitride coated structures

Jin, Hao; Weber, Klaus; Deenapanray, Prakash; Blakers, Andrew


The effect of high-temperature anneals on low-pressure chemical-vapor deposited (LPCVD) Si3 N4 /thermally grown SiO2 stacks on silicon wafers has been studied. Annealing in a nitrogen atmosphere at 900 or 1000°C for 30 min causes a substantial reduction

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
Source: Journal of the Electrochemical Society
DOI: 10.1149/1.2207058


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