Hydrogen reintroduction by forming gas annealing to LPCVD silicon nitride coated structures
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Jin, Hao; Weber, Klaus; Deenapanray, Prakash; Blakers, Andrew
Description
The effect of high-temperature anneals on low-pressure chemical-vapor deposited (LPCVD) Si3 N4 /thermally grown SiO2 stacks on silicon wafers has been studied. Annealing in a nitrogen atmosphere at 900 or 1000°C for 30 min causes a substantial reduction
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2006 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/27295 |
| Source: | Journal of the Electrochemical Society |
| DOI: | 10.1149/1.2207058 |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Jin_Hydrogen_reintroduction_by_2006.pdf | 137.33 kB | Adobe PDF | Request a copy |
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