Hydrogen reintroduction by forming gas annealing to LPCVD silicon nitride coated structures
The effect of high-temperature anneals on low-pressure chemical-vapor deposited (LPCVD) Si3 N4 /thermally grown SiO2 stacks on silicon wafers has been studied. Annealing in a nitrogen atmosphere at 900 or 1000°C for 30 min causes a substantial reduction
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|Source:||Journal of the Electrochemical Society|
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