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Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers

Stewart Sears, Kalista; Tan, Hoe Hark; Buda, Manuela; Wong-Leung, Yin-Yin (Jennifer); Jagadish, Chennupati


This paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and the lasing characteristics of diode lasers incorporating either 3 or 5 stacked quantum dot layers. Lasing occurred from the quantum dot excited state when 3-stacked layers were used. However by incorporating 5 stacked layers of quantum dots into a device, the increased gain volume enabled lasing from the ground state for cavity lengths as short as 1.5 mm.

CollectionsANU Research Publications
Date published: 2006
Type: Conference paper
Source: Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology
DOI: 10.1109/ICONN.2006.340664


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