Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers
This paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and the lasing characteristics of diode lasers incorporating either 3 or 5 stacked quantum dot layers. Lasing occurred from the quantum dot excited state when 3-stacked layers were used. However by incorporating 5 stacked layers of quantum dots into a device, the increased gain volume enabled lasing from the ground state for cavity lengths as short as 1.5 mm.
|Collections||ANU Research Publications|
|Source:||Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology|
|01_Stewart Sears_Growth_and_Characterization_of_2006.pdf||312.71 kB||Adobe PDF||Request a copy|
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