Thermal Annealing Study on InGaAs/GaAs Quantum Dot Infrared Photodetectors
In this work, rapid thermal annealing was performed on InGaAs/GaAs quantum dot infrared photodetectors (QDIPs) at different temperatures. The photoluminescence showed a blue-shifted wavelength and the spectral response exhibited red-shift from the annealed QDIPs in comparison with the as-grown sample. The overall device performance was not affected by low annealing temperature however for high annealing temperature, some degradation in device detectivity (but not responsivity) was observed....[Show more]
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|Source:||Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology|
|01_Fu_Thermal_Annealing_Study_on_2006.pdf||281.81 kB||Adobe PDF||Request a copy|
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