Surface Passivation of Boron-Diffused p-Type Silicon Surfaces With (1 0 0) and (1 1 1) Orientations by ALD Al 2 O 3  Layers

Liang, Wensheng; Weber, Klaus; Suh, Dong Chul; Phang, Sieu Pheng; Yu, Jun X; McAuley, Andrew; Legg, Bridget

doi:10.1109/JPHOTOV.2012.2235525

Surface Passivation of Boron-Diffused p-Type Silicon Surfaces With (1 0 0) and (1 1 1) Orientations by ALD Al 2 O 3 Layers

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Liang, Wensheng; Weber, Klaus; Suh, Dong Chul; Phang, Sieu Pheng; Yu, Jun X; McAuley, Andrew; Legg, Bridget

Description

Boron-diffused p+/n/p+ and undiffused silicon samples with (1 0 0) and (1 1 1) orientations passivated by aluminum oxide (Al2 O3) that is synthesized by atomic layer deposition (ALD) have been investigated. Emitter saturation current densities of ∼24, 2

Collections	ANU Research Publications
Date published:	2013
Type:	Journal article
URI:	http://hdl.handle.net/1885/27044
Source:	IEEE Journal of Photovoltaics
DOI:	10.1109/JPHOTOV.2012.2235525

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Surface Passivation of Boron-Diffused p-Type Silicon Surfaces With (1 0 0) and (1 1 1) Orientations by ALD Al 2 O 3 Layers

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