Surface Passivation of Boron-Diffused p-Type Silicon Surfaces With (1 0 0) and (1 1 1) Orientations by ALD Al 2 O 3 Layers
Boron-diffused p+/n/p+ and undiffused silicon samples with (1 0 0) and (1 1 1) orientations passivated by aluminum oxide (Al2 O3) that is synthesized by atomic layer deposition (ALD) have been investigated. Emitter saturation current densities of ∼24, 2
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|Source:||IEEE Journal of Photovoltaics|
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