Surface Passivation of Boron-Diffused p-Type Silicon Surfaces With (1 0 0) and (1 1 1) Orientations by ALD Al 2 O 3 Layers
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Liang, Wensheng; Weber, Klaus; Suh, Dong Chul; Phang, Sieu Pheng; Yu, Jun X; McAuley, Andrew; Legg, Bridget
Description
Boron-diffused p+/n/p+ and undiffused silicon samples with (1 0 0) and (1 1 1) orientations passivated by aluminum oxide (Al2 O3) that is synthesized by atomic layer deposition (ALD) have been investigated. Emitter saturation current densities of ∼24, 2
Collections | ANU Research Publications |
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Date published: | 2013 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/27044 |
Source: | IEEE Journal of Photovoltaics |
DOI: | 10.1109/JPHOTOV.2012.2235525 |
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01_Liang_Surface_Passivation_of_2013.pdf | 3.39 MB | Adobe PDF | Request a copy |
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