Gao, Qiang; Buda, Manuela; Tan, Hoe Hark; Jagadish, Chennupati
InGaAsN quantum dots (QDs) were grown on (001) GaAs substrates by metalorganic chemical vapor deposition. Edge-emitting lasers based on this QD structure were fabricated and characterized. It was found that InGaAsN is easier to form QDs than InGaAs with the same nominal In content. InGaAsN laser devices lased at much shorter wavelength compared to the photoluminescence emission.
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