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Growth and characterization of compound semiconductor nanowires on Si

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Gao, Qiang; Kang, Jung-Hyun; Jackson, Howard E; Smith, Leigh M; Yarrison-Rice, Jan M; Zou, Jin; Jagadish, Chennupati; Tan, Hark Hoe

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We review GaAs nanowires and related nanowire heterostructures grown on Si (111) substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, micro-photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and strain effects on the bandgap energy of GaAs nanowires.

dc.contributor.authorGao, Qiang
dc.contributor.authorKang, Jung-Hyun
dc.contributor.authorJackson, Howard E
dc.contributor.authorSmith, Leigh M
dc.contributor.authorYarrison-Rice, Jan M
dc.contributor.authorZou, Jin
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.coverage.spatialPortland USA
dc.date.accessioned2015-12-07T22:49:32Z
dc.date.createdAugust 15-18 2011
dc.identifier.isbn9781457715150
dc.identifier.urihttp://hdl.handle.net/1885/26795
dc.description.abstractWe review GaAs nanowires and related nanowire heterostructures grown on Si (111) substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, micro-photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and strain effects on the bandgap energy of GaAs nanowires.
dc.publisherIEEE Nanotechnology
dc.relation.ispartofseriesIEEE Conference on Nanotechnology (IEEE-NANO 2011)
dc.sourceProceedings of IEEE Conference on Nanotechnology (IEEE-NANO 2011)
dc.source.urihttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6144365&tag=1
dc.subjectKeywords: Band gap energy; Compound semiconductors; GaAs; Micro Raman Spectroscopy; Microphotoluminescence; Nanowire heterostructures; Si(111) substrate; Strain effect; Vapor-liquid-solid mechanism; Gallium arsenide; Metallorganic chemical vapor deposition; Nanowir
dc.titleGrowth and characterization of compound semiconductor nanowires on Si
dc.typeConference paper
local.description.notesImported from ARIES
local.description.refereedYes
dc.date.issued2011
local.identifier.absfor091208 - Organic Semiconductors
local.identifier.ariespublicationf5625xPUB47
local.type.statusPublished Version
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKang, Jung-Hyun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJackson, Howard E , University of Cincinnati
local.contributor.affiliationSmith, Leigh M , University of Cincinnati
local.contributor.affiliationYarrison-Rice, Jan M , University of Miami
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage44
local.bibliographicCitation.lastpage47
local.identifier.doi10.1109/NANO.2011.6144553
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
dc.date.updated2016-02-24T09:26:19Z
local.identifier.scopusID2-s2.0-84858975228
CollectionsANU Research Publications

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