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Growth and characterization of compound semiconductor nanowires on Si

Gao, Qiang; Kang, Jung-Hyun; Jackson, Howard E; Smith, Leigh M; Yarrison-Rice, Jan M; Zou, Jin; Jagadish, Chennupati; Tan, Hark Hoe


We review GaAs nanowires and related nanowire heterostructures grown on Si (111) substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, micro-photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and strain effects on the bandgap energy of GaAs nanowires.

CollectionsANU Research Publications
Date published: 2011
Type: Conference paper
Source: Proceedings of IEEE Conference on Nanotechnology (IEEE-NANO 2011)
DOI: 10.1109/NANO.2011.6144553


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