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Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN

Kauppinen, Christoffer; Haggren, Tuomas; Lipsanen, Harri; Sopanen, Markku


The metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN (0001) is demonstrated. The InP nanowires exhibit the same wurtzite structure as the underlying wurtzite GaN. The photoluminescence studies indicate that the InP nanowires are single-phase wurtzite with high crystalline quality which is supported by transmission and scanning electron microscopy images. The position of the second valence band or valence band splitting energy is also deduced from the photoluminescence data to...[Show more]

CollectionsANU Research Publications
Date published: 2020
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.5134964
Access Rights: Open Access


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