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Integration of Quantum Dot devices by Selective Area Epitaxy

Mokkapati, Sudha; Jagadish, Chennupati; McBean, K E; Phillips, Matthew R; Tan, Hark Hoe

Description

The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.

CollectionsANU Research Publications
Date published: 2006
Type: Conference paper
URI: http://hdl.handle.net/1885/26520
Source: Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology
DOI: 10.1109/ICONN.2006.340648

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