Mokkapati, Sudha; Jagadish, Chennupati; McBean, K E; Phillips, Matthew R; Tan, Hark Hoe
The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.
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