Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon
Extended defects created in Si by ion implantation to doses below the amorphization threshold have been studied after annealing at 800 °C for 15 min. The implant species were the group IV elements Si, Ge, and Sn, and structural defects created by similar
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
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