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Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon

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Wong-Leung, Jennifer; Fatima, S; Jagadish, Chennupati; Fitz Gerald, John; Chou, C; Zou, Jin; Cockayne, David John Hugh

Description

Extended defects created in Si by ion implantation to doses below the amorphization threshold have been studied after annealing at 800 °C for 15 min. The implant species were the group IV elements Si, Ge, and Sn, and structural defects created by similar

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
URI: http://hdl.handle.net/1885/26487
Source: Journal of Applied Physics

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