Araujo, Leandro; Kluth, Patrick; Azevedo, G de M; Ridgway, Mark C
Ge nanocrystals were produced in SiO2 by ion implantation and thermal annealing. Size and depth distributions as well as short-range structural and thermal properties of the nanocrystals were analysed by RBS, TEM, SAXS and EXAFS. From temperature-dependent EXAFS measurements analysed using a correlated anharmonic Einstein model and thermodynamic perturbation theory it was verified that the thermal properties of Ge nanocrystals differ significantly from both bulk crystalline and amorphous Ge....[Show more]
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