Germanium-on-Insulator Fabricated by Ion Implantation and Dry Oxidation Technique
Germanium-on-insulator (GeOI) is a promising platform for silicon-based photonics as well as microelectronics. In this work GeOI structures were produced by a modified Ge-condensation technique, in which Ge ions were implanted into a top silicon layer. Through an appropriate schedule of cyclic dry oxidation, a ∼20 nm thick, single crystalline Ge layer could be obtained. Structural investigation confirmed that the layer was fully-relaxed, which is desirable for the overgrowth of Ge and GaAs for...[Show more]
|Collections||ANU Research Publications|
|Source:||Proceedings of IEEE Conference on Nanotechnology (IEEE-NANO 2011)|
|01_Choi_Germanium-on-Insulator_2011.pdf||28.72 kB||Adobe PDF||Request a copy|
|02_Choi_Germanium-on-Insulator_2011.pdf||1.67 MB||Adobe PDF||Request a copy|
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