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Germanium-on-Insulator Fabricated by Ion Implantation and Dry Oxidation Technique

Luther-Davies, Barry; Kim, Tae-Hyun; Elliman, Robert; Choi, Duk-Yong


Germanium-on-insulator (GeOI) is a promising platform for silicon-based photonics as well as microelectronics. In this work GeOI structures were produced by a modified Ge-condensation technique, in which Ge ions were implanted into a top silicon layer. Through an appropriate schedule of cyclic dry oxidation, a ∼20 nm thick, single crystalline Ge layer could be obtained. Structural investigation confirmed that the layer was fully-relaxed, which is desirable for the overgrowth of Ge and GaAs for...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Conference paper
Source: Proceedings of IEEE Conference on Nanotechnology (IEEE-NANO 2011)
DOI: 10.1109/NANO.2011.6144365


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