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Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires

Zhao, Q X; Willander, M; Lu, Wei; Liu, Qiu Xiang; Shen, S C; Jagadish, Chennupati; Zou, Jin; Cockayne, David John Hugh; Tan, Hark Hoe


Asymmetric double GaAs/AlGaAs V-grooved quantum wires, grown by low pressure metalorganic chemical vapor deposition, are studied using photoluminescence (PL) spectroscopy. The structure was selectively treated by ion implantation at different arsenic (As) doses after growth. The ion implantation strongly reduces the efficiency of the emissions from the implanted well regions or even quenches the PL emissions from certain well regions due to irradiation damage. Wire emission is clearly resolved...[Show more]

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
Source: Journal of Applied Physics


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