Effect of implant temperature on extended defects created by ion implantation in silicon
Extended defects created by ion implantation have been shown to be dependent on the implantation conditions and the annealing conditions. In this paper, we study the effect of implant temperature on defects created by medium dose ion implantation in silicon. We report a difference in the type of extended defects created by identical Sn implants in samples subject to different implant temperatures while very little difference is observed in the type of defects created by Si implantation in...[Show more]
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