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Effective impurity gettering by phosphorus- and boron-diffused polysilicon passivating contacts for silicon solar cells

Liu, AnYao; Yan, Di; Phang, Sieu Pheng; Cuevas, Andres; Macdonald, Daniel

Description

This paper presents direct experimental evidence for the strong impurity gettering effects associated with the formation of both phosphorus and boron doped polysilicon/oxide passivating contacts for silicon solar cells, doped via thermal diffusion from POCl3 or BBr3 sources. Ion-implanted iron is used as a marker to quantify the gettering effectiveness via carrier lifetime measurements. The process conditions for fabricating optimum polysilicon passivating contacts are found to remove more than...[Show more]

dc.contributor.authorLiu, AnYao
dc.contributor.authorYan, Di
dc.contributor.authorPhang, Sieu Pheng
dc.contributor.authorCuevas, Andres
dc.contributor.authorMacdonald, Daniel
dc.date.accessioned2021-10-27T04:07:43Z
dc.identifier.issn0927-0248
dc.identifier.urihttp://hdl.handle.net/1885/251227
dc.description.abstractThis paper presents direct experimental evidence for the strong impurity gettering effects associated with the formation of both phosphorus and boron doped polysilicon/oxide passivating contacts for silicon solar cells, doped via thermal diffusion from POCl3 or BBr3 sources. Ion-implanted iron is used as a marker to quantify the gettering effectiveness via carrier lifetime measurements. The process conditions for fabricating optimum polysilicon passivating contacts are found to remove more than 99.9% of the iron from the silicon wafer bulk. The gettering effects of POCl3 and BBr3 diffused polysilicon/oxide contacts mainly arise from the dopant diffusions, as opposed to gettering by structural defects in the polysilicon films. The thin oxide interlayer hinders the gettering effectiveness at low diffusion temperatures, although its blocking effect becomes small at the moderate temperatures used to fabricate optimum polysilicon contacts. The gettering effectiveness increases with increasing diffusion temperature. The gettering of iron from the silicon wafer bulk to the surface layers is found to have a negligible impact on their ability to suppress recombination at the interface with the silicon wafer. Therefore, the formation of polysilicon/oxide passivating contacts, via thermal diffusion from POCl3 and BBr3 sources, not only achieves high quality surface and contact passivation but also has the net additional benefit of achieving very effective gettering of unwanted impurities in the silicon wafer bulk.
dc.description.sponsorshipThis work has been supported by the Australian Renewable Energy Agency (ARENA) through project RND009.
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.publisherElsevier
dc.rights© 2017 Elsevier B.V.
dc.sourceSolar Energy Materials and Solar Cells
dc.subjectGettering
dc.subjectSilicon solar cell
dc.subjectPassivating contact
dc.subjectPolysilicon thin film
dc.subjectDopant diffusion
dc.subjectIron
dc.titleEffective impurity gettering by phosphorus- and boron-diffused polysilicon passivating contacts for silicon solar cells
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume179
dc.date.issued2018
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.absfor030399 - Macromolecular and Materials Chemistry not elsewhere classified
local.identifier.absfor029999 - Physical Sciences not elsewhere classified
local.identifier.ariespublicationa383154xPUB9223
local.publisher.urlhttp://www.elsevier.com/
local.type.statusPublished Version
local.contributor.affiliationLiu, Anyao, College of Engineering and Computer Science, ANU
local.contributor.affiliationYan, Di, College of Engineering and Computer Science, ANU
local.contributor.affiliationPhang, Sieu Pheng, College of Engineering and Computer Science, ANU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.description.embargo2099-12-31
local.bibliographicCitation.startpage136
local.bibliographicCitation.lastpage141
local.identifier.doi10.1016/j.solmat.2017.11.004
dc.date.updated2020-11-23T11:39:40Z
local.identifier.scopusID2-s2.0-85038867117
CollectionsANU Research Publications

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