Effective impurity gettering by phosphorus- and boron-diffused polysilicon passivating contacts for silicon solar cells
This paper presents direct experimental evidence for the strong impurity gettering effects associated with the formation of both phosphorus and boron doped polysilicon/oxide passivating contacts for silicon solar cells, doped via thermal diffusion from POCl3 or BBr3 sources. Ion-implanted iron is used as a marker to quantify the gettering effectiveness via carrier lifetime measurements. The process conditions for fabricating optimum polysilicon passivating contacts are found to remove more than...[Show more]
|Collections||ANU Research Publications|
|Source:||Solar Energy Materials and Solar Cells|
|01_Liu_Effective_impurity_gettering_2018.pdf||678.84 kB||Adobe PDF||Request a copy|
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