Applications of Photoluminescence Imaging to Dopant and Carrier Concentration Measurements of Silicon Wafers
Photoluminescence-based imaging is most commonly used to measure the excess minority carrier density and its corresponding lifetime. By using appropriate surface treatments, this high-resolution imaging technique can also be used for majority carrier concentration determination. The mechanism involves effectively pinning the minority excess carrier density, resulting in a dependence of the photoluminescence intensity on only the majority carrier density. Three suitable surface preparation...[Show more]
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|Source:||IEEE Journal of Photovoltaics|
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