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Applications of Photoluminescence Imaging to Dopant and Carrier Concentration Measurements of Silicon Wafers

Lim, Siew Yee; Forster, Maxime; Zhang, Xinyu; Holtkamp, Jan; Martin, Schubert; Cuevas, Andres; MacDonald, Daniel


Photoluminescence-based imaging is most commonly used to measure the excess minority carrier density and its corresponding lifetime. By using appropriate surface treatments, this high-resolution imaging technique can also be used for majority carrier concentration determination. The mechanism involves effectively pinning the minority excess carrier density, resulting in a dependence of the photoluminescence intensity on only the majority carrier density. Three suitable surface preparation...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
Source: IEEE Journal of Photovoltaics
DOI: 10.1109/JPHOTOV.2012.2228301


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