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Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

Sun, Ryan; Nguyen, Hieu; Rougieux, Fiacre; Macdonald, Daniel


Photoluminescence (PL) images and micro-PL maps were taken on Cu- or Ni-doped monocrystalline silicon wafers, to investigate the distribution of the metal precipitates. Several n-type and p-type wafers were used in which Cu or Ni were introduced in the starting melt of the ingots and precipitated during the ingot cooling (as opposed to surface contamination). The micro-PL mapping allowed investigation of the metal precipitates with a higher spatial resolution. Markedly different precipitation...[Show more]

CollectionsANU Research Publications
Date published: 2017
Type: Journal article
Source: Journal of Crystal Growth
DOI: 10.1016/j.jcrysgro.2016.12.084


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